feb.1999 drain-source voltage gate-source voltage drain current drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight FK10KM-10 v dss ............................................................................... 500v r ds (on) (max) ............................................................. 1.13 w i d ......................................................................................... 10a v iso ................................................................................ 2000v integrated fast recovery diode (max.) ....... 150ns 500 30 10 30 10 30 35 C55 ~ +150 C55 ~ +150 2000 2.0 v dss v gss i d i dm i s i sm p d t ch t stg v iso v v a a a a w c c v rms g outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FK10KM-10 high-speed switching use application servo motor drive, robot, ups, inverter fluorecent lamp, etc. w q e 15 ?0.3 14 ?0.5 10 ?0.3 2.8 ?0.2 f 3.2 ?0.2 1.1 ?0.2 1.1 ?0.2 0.75 ?0.15 2.54 ?0.25 2.54 ?0.25 2.6 ?0.2 4.5 ?0.2 0.75 ?0.15 3 ?0.3 3.6 ?0.3 6.5 ?0.3 123 q gate w drain e source v gs = 0v v ds = 0v ac for 1minute, terminal to case typical value maximum ratings (tc = 25 c) parameter conditions symbol ratings unit
feb.1999 v v m a ma v w v s pf pf pf ns ns ns ns v c/w ns 500 30 2 3.3 3 0.88 4.40 5.5 1100 130 20 20 30 95 35 1.5 v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet FK10KM-10 high-speed switching use i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 500v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 10v i d = 5a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case i s = 10a, d is /d t = C100a/ m s 10 1 4 1.13 5.65 2.0 3.57 150 5 3 2 10 1 7 5 3 2 10 0 7 5 7 5 3 2 10 ? 23 5710 1 10 0 23 5710 2 23 5710 3 t c = 25? single pulse tw=10? 100? 1ms 10ms dc 50 40 30 20 10 0 200 150 100 50 0 power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 mitsubishi nch power mosfet FK10KM-10 high-speed switching use 10 1 7 5 3 2 10 ? 10 ? 23 5710 0 10 0 7 5 3 2 23 5710 1 t c =25? v ds = 10v pulse test 125? 75? 20 16 12 8 4 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 40 32 24 16 8 0 0 4 8 12 16 20 i d = 20a t c = 25? pulse test 10a 5a 0 23 10 ? 5710 0 23 5710 1 23 5710 2 2.0 1.6 1.2 0.8 0.4 t c = 25? pulse test v gs = 10v 20v 10 8 6 4 2 0 0 4 8 12 16 20 p d = 35w t c = 25? pulse test v gs = 20v 10v 6v 4v 5v 20 16 12 8 4 0 0 1020304050 t c = 25? pulse test 6v 5v v gs = 20v 10v p d = 35w output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s)
feb.1999 mitsubishi nch power mosfet FK10KM-10 high-speed switching use 5.0 4.0 3.0 2.0 1.0 0 ?0 0 50 100 150 v ds = 10v i d = 1ma 20 16 12 8 4 0 0 20406080100 v ds = 100v 400v 200v tch = 25? i d = 10a 23 5710 0 10 3 7 5 3 2 10 2 7 5 23 5710 1 10 ? 10 1 3 2 tch = 25? v dd = 200v v gs = 10v r gen = r gs = 50 w t f t d(off) t r t d(on) 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 2 23 5710 1 23 5710 0 23 7 5 ciss tch = 25? f = 1mhz v gs = 0v coss crss 10 0 7 5 3 2 10 ? 0 10 1 7 5 3 2 50 100 150 200 250 v gs = 10v i d = 1/2i d pulse test switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) 40 32 24 16 8 0 0 0.8 1.6 2.4 3.2 4.0 t c =125? 25? 75? v gs = 0v pulse test
feb.1999 mitsubishi nch power mosfet FK10KM-10 high-speed switching use 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 10 1 10 2 7 5 3 2 10 1 7 5 3 2 10 0 d is/ d t = ?00a / m s v gs = 0v v dd = 250v i rr t rr t ch = 25? t ch = 150? 1.4 1.2 1.0 0.8 0.6 0.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 5 3 2 10 1 23 5710 2 10 2 7 5 3 2 23 5710 3 10 1 3 2 10 1 7 5 5 7 5 7 5 3 2 10 0 i s = 10a v gs = 0v v dd = 250v i rr t rr t ch = 25? t ch = 150? 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 10 ? p dm tw d= t tw t d=1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse channel temperature tch (?) breakdown voltage vs. channel temperature (typical) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) reverse recovery time t rr (ns) reverse recovery current i rr (a) reverse recovery current i rr (a) source current i s (a) diode reverse vs. source current characteristic (typical) reverse recovery time t rr (ns) source current d is /d t (?/ m s) diode reverse vs. source current d is /d t characteristic (typical) transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (ch?) (?/ w)
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